Abstract III-V semiconductor materials are the basis of photonic devices due to their unique optical properties. There is an increasing demand for fabricating these devices on unconventional substrates for various applications, such as silicon photonic integrated circuits, flexible optoelectronic devices, and ultralow-profile photonics. However, the III-V semiconductor epitaxy often encounters problems from the lattice, thermal, and polarity mismatches with foreign substrates. In recent years, the epitaxial growth of defect-free group-III-V materials through two-dimensional materials has exploded as an attractive area of research. The nonconventional epitaxy way demonstrates potential advantages over conventional ones, including high quality and freedom of using diverse substrates, making them viable candidates for emerging applications. Herein, we offer a complete review of the recent achievements made in this field. We summarize the growth conditions and mechanisms involved in fabricating these structures through different two-dimensional materials. The unique optical properties of the epitaxy correlating with their growth conditions are discussed, along with their respective applications in optics and nanophotonics, including light-emitting diodes, photodetectors, and solar cells. Finally, we detail the remaining obstacles and challenges to exploit the potential for such practical applications fully.

中文翻译：

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通过二维材料用于光电器件的新型 III-V 半导体外延

摘要 III-V 族半导体材料由于其独特的光学特性而成为光子器件的基础。在用于各种应用的非常规基板上制造这些器件的需求不断增加，例如硅光子集成电路、柔性光电器件和超薄型光子学。然而，III-V 族半导体外延经常遇到晶格、热和极性与外来衬底不匹配的问题。近年来，通过二维材料进行无缺陷 III-V 族材料的外延生长已成为一个有吸引力的研究领域。非常规外延方式展示了与传统方式相比的潜在优势，包括高质量和使用不同衬底的自由度，使其成为新兴应用的可行候选者。在此处，我们全面回顾了该领域最近取得的成就。我们总结了通过不同的二维材料制造这些结构所涉及的生长条件和机制。讨论了与其生长条件相关的外延的独特光学特性，以及它们在光学和纳米光子学中的各自应用，包括发光二极管、光电探测器和太阳能电池。最后，我们详细介绍了充分挖掘此类实际应用潜力的剩余障碍和挑战。讨论了与其生长条件相关的外延的独特光学特性，以及它们在光学和纳米光子学中的各自应用，包括发光二极管、光电探测器和太阳能电池。最后，我们详细介绍了充分挖掘此类实际应用潜力的剩余障碍和挑战。讨论了与其生长条件相关的外延的独特光学特性，以及它们在光学和纳米光子学中的各自应用，包括发光二极管、光电探测器和太阳能电池。最后，我们详细介绍了充分挖掘此类实际应用潜力的剩余障碍和挑战。