Ultra-wide bandgap materials show great promise as a solution to some of the limitations of current state of the art semiconductor technology. Among these, diamond has exhibited great potential for use in high-power, high-temperature electronics, as well as sensing and quantum applications. Yet, significant challenges associated with impurity doping of the constrained diamond lattice remain a primary impediment towards the development of diamond-based electronic devices. An alternative approach, used with continued success to unlock the use of diamond for semiconductor applications, has been that of ‘surface transfer doping’ - a process by which intrinsically insulating diamond surfaces can be made semiconducting without the need for traditional impurity doping. Here, we present a review of progress in surface transfer doping of diamond, both a history and current outlook of this highly exploitable attribute.

超宽带隙材料有望解决当前半导体技术的某些局限性。其中，金刚石在高功率，高温电子产品以及传感和量子应用中显示出巨大的潜力。然而，与受限金刚石晶格的杂质掺杂相关的重大挑战仍然是发展基于金刚石的电子设备的主要障碍。一种成功地用于半导体应用中的金刚石解锁方法的替代方法一直是“表面转移掺杂”方法，通过该方法可以使本质上绝缘的金刚石表面半导体化，而无需进行传统的杂质掺杂。在这里，我们对金刚石表面转移掺杂的研究进展进行了回顾，