Ferroelectrics Letters Section ( IF 0.4 ) Pub Date : 2021-07-21 , DOI: 10.1080/07315171.2021.1923119 Amit Singh 1 , Sanjai Singh 1
Abstract
The present study reveals that ZrO2 MOS capacitor has been fabricated by RF sputtering technique. The maximum refractive index has been found to be 2.29 at 400 °C. From capacitance-voltage graph, it has been observed that the memory window and accumulation capacitance has been found to be maximum at 400 °C. The maximum memory window and accumulation capacitance has been found to be 0.50 V and 7.00 ×10−11 F, respectively. The flat band voltage shifts toward positive side at all temperatures. From current-voltage curve, it has been observed that the leakage current is found to be low at 400 °C and it is order of 10 − 7A at +20 V.
中文翻译:
退火温度对Al/ZrO2/p-Si MOS电容器电性能的影响
摘要
目前的研究表明,ZrO 2 MOS 电容器已通过射频溅射技术制造。已发现最大折射率在 400 °C 时为 2.29。从电容-电压图可以看出,内存窗口和累积电容在 400 °C 时达到最大值。已发现最大存储器窗口和累积电容分别为 0.50 V 和 7.00 × 10 -11 F。在所有温度下,平带电压都向正侧移动。从电流-电压曲线可以看出,漏电流在 400 °C 时很低,在 +20 V 时约为 10 − 7 A。