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Characteristic analysis and suppression of SiC MOSFET-based crosstalk for inductive power transfer systems
International Journal of Circuit Theory and Applications ( IF 2.3 ) Pub Date : 2021-07-29 , DOI: 10.1002/cta.3105
Qiang Bo 1, 2 , Yuwang Zhang 1, 2 , Yanjie Guo 1, 2 , Lifang Wang 1
Affiliation  

Due to the lower gate threshold voltage of silicon carbide (SiC) MOSFET as compared with the silicon (Si) MOSFET, crosstalk significantly limits the high-speed switching performance of SiC MOSFET-based inductive power transfer (IPT) systems. The paper studies the crosstalk characteristic and proposes a suppression method of crosstalk aiming at IPT systems with phase-shifted control. Firstly, the generation mechanism of crosstalk is modeled and analyzed. Then, based on the analysis results, the special crosstalk problem for IPT systems with phase-shifted control is discussed, and a crosstalk suppression method is analyzed based on the optimization of compensation network parameters. Finally, a 1-kW IPT system prototype is built for experimental verification. The experimental results show that the optimization method can effectively suppress the crosstalk problem of the IPT system with phase-shifted control and does not significantly affect the output power and transmission efficiency.

中文翻译:

基于 SiC MOSFET 的电感式电力传输系统串扰特性分析与抑制

由于碳化硅 (SiC) MOSFET 的栅极阈值电压低于硅 (Si) MOSFET,串扰显着限制了基于 SiC MOSFET 的感应功率传输 (IPT) 系统的高速开关性能。本文研究了串扰特性,提出了一种针对相移控制的IPT系统的串扰抑制方法。首先,对串扰的产生机制进行建模和分析。然后,基于分析结果,讨论了移相控制IPT系统的特殊串扰问题,并分析了一种基于补偿网络参数优化的串扰抑制方法。最后,构建了一个 1 kW IPT 系统原型用于实验验证。
更新日期:2021-07-29
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