A pulsed semiconductor disk laser based on the Al _x Ga_{1 – x} As/Al _y Ga_{1 – y} As structure with resonantly periodic gain and a built-in Bragg mirror emitting at a wavelength near 780 nm is studied. The laser characteristics are presented both for pumping by an electron beam and for optical pumping by laser diode radiation with a wavelength of 450 nm. Under pumping by an electron beam, a peak power of 4.4 W is achieved with a slope efficiency of over 10 %, while under optical pumping, the power is 0.2 W with a slope efficiency of 2.2 % and approximately the same cavity parameters. Possible reasons for the lower powers and efficiency under optical pumping are discussed.

中文翻译：

---

基于 MOCVD 生长的 Al x Ga1–x As/Al y Ga1–y As 异质结构，具有光学和电子束泵浦的波长为 780 nm 的半导体圆盘激光器

基于Al的脉冲半导体圆盘激光器 _X 嘎_{1 –X} 砷/铝 _是 嘎_{1 –是} 研究了具有共振周期增益和在 780 nm 附近波长发射的内置布拉格反射镜的结构。对于通过电子束泵浦和通过波长为 450 nm 的激光二极管辐射进行光泵浦，都给出了激光特性。在电子束泵浦下，峰值功率为 4.4 W，斜率效率超过 10%，而在光泵浦下，功率为 0.2 W，斜率效率为 2.2%，腔参数大致相同。讨论了光泵浦下功率和效率较低的可能原因。