Abstract. Background: Extreme ultraviolet (EUV) lithography was introduced for the high-volume manufacturing of state-of-the-art semiconductor devices in 2019. One of the issues for the CD metrology of an EUV resist pattern is the resist shrinkage since the ratio of the shrinkage to the CD increases in EUV lithography compared with that in immersion argon fluoride lithography. Aim: A CD-SEM metrology for an EUV resist that was compatible with low shrinkage and high spatial resolution was investigated by using primary electrons (PEs) with high energy. Approach: The shrinkage, image sharpness, repeatability, and line edge roughness (LER) were evaluated for the EUV resist using PEs with energies of 200, 800, and 4000 eV. Results: The smallest shrinkage was obtained under the conditions of the repeatability from 0.15 to 0.22 nm by using PEs with an energy of 4000 eV. Moreover, the LERs obtained for 200, 800, and 4000 eV were almost the same. Conclusions: While the electron irradiation damage for an under layer and the amount of shrinkage depending on pattern size could cause issues, the high voltage CD-SEM provides a solution to CD monitoring in high-volume manufacturing using EUV lithography.

中文翻译：

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使用高压 CD-SEM 对 EUV 光刻胶进行 CD 计量：收缩率、图像清晰度、可重复性和线边缘粗糙度

摘要。背景：极紫外 (EUV) 光刻技术于 2019 年被引入用于大批量制造最先进的半导体器件。EUV 光刻胶图案的 CD 计量的问题之一是光刻胶收缩率，因为与浸没式氟化氩光刻相比，EUV 光刻中对 CD 的收缩增加了。目的：通过使用具有高能量的初级电子 (PE)，研究了一种与低收缩率和高空间分辨率兼容的 EUV 光刻胶的 CD-SEM 计量方法。方法：使用能量为 200、800 和 4000 eV 的 PE 评估 EUV 抗蚀剂的收缩率、图像清晰度、可重复性和线边缘粗糙度 (LER)。结果：在重复性为0.15～0的条件下，收缩率最小。22 nm，使用能量为 4000 eV 的 PE。此外，在 200、800 和 4000 eV 下获得的 LER 几乎相同。结论：虽然底层的电子辐照损伤和取决于图案尺寸的收缩量可能会导致问题，但高压 CD-SEM 为使用 EUV 光刻的大批量制造中的 CD 监测提供了解决方案。