A physics-based analytical model is important to understand the working mechanism through process parameters of any innovative material heterostructure. We present an analytical model to calculate the power conversion efficiency of solar cells based on graphene and III-V direct bandgap semiconductors. The model is comprehensively developed by incorporating several current densities obtained from both the generation and recombination processes. Moreover, to obtain a highly efficient Schottky junction solar cell, we propose an optimized structure of graphene/GaAs with lattice-matched passivation and carrier selective layers. The structure has the advantage of surface passivation and photon recycling that reduces interface recombination and ensures more electron–hole pair generation, respectively. It exhibits a theoretical efficiency of >18 % from the analytical model simulation which is later verified by numerical simulation using SCAPS 1D software. The analytical model will provide not only a better understanding of the solar cells’ operation but also a comparative study among them to achieve better efficiency in the future. In addition, the enhanced efficiency of the proposed structure will encourage further research in this field of study.

中文翻译：

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石墨烯/n-GaAs肖特基结太阳能电池的分析建模和设计优化

基于物理的分析模型对于通过任何创新材料异质结构的工艺参数了解工作机制非常重要。我们提出了一个分析模型来计算基于石墨烯和 III-V 直接带隙半导体的太阳能电池的功率转换效率。该模型是通过结合从生成和重组过程中获得的几个电流密度来全面开发的。此外，为了获得高效的肖特基结太阳能电池，我们提出了具有晶格匹配钝化层和载流子选择层的石墨烯/GaAs 优化结构。该结构具有表面钝化和光子再循环的优点，可分别减少界面复合并确保产生更多的电子-空穴对。它的理论效率为 > 18% 来自分析模型模拟，随后使用 SCAPS 1D 软件通过数值模拟进行验证。该分析模型不仅可以更好地了解太阳能电池的运行情况，还可以对它们进行比较研究，以在未来实现更好的效率。此外，拟议结构的效率提高将鼓励该研究领域的进一步研究。