Spintronics is one of the emerging fields for next-generation low power, high endurance, non-volatile, and area efficient memory technology. Spin torque transfer (STT), spin orbit torque (SOT), and electric field assisted switching mechanisms have been used to switch magnetization in various spintronic devices. However, their operation speed is fundamentally limited by the spin precession time that typically ranges in 10–400 ps. Such a time constraint severely limits the possible operation of these devices in high-speed systems. Optical switching using ultrashort laser pulses, on the other hand, is able to achieve sub-picosecond switching operation in magnetic tunnel junctions (MTJs). In this paper, all optically switched (AOS) MTJ has been used to design high speed and low power hybrid MTJ/CMOS based logic circuits such as AND/NAND, XOR/XNOR, and full adder. Owing to the ultra-fast switching operation of AOS-MTJ, the circuit level results show that the energy and speed of AOS-MTJ based logic circuits are improved by 85% and 97%, respectively, when compared to STT based circuits. In comparison to SOT based designs, the proposed logic circuits show 10% and 91% improvement in energy efficiency and speed, respectively.

中文翻译：

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使用全光磁隧道结的混合自旋电子学/CMOS 逻辑电路

自旋电子学是下一代低功耗、高耐用性、非易失性和面积高效存储技术的新兴领域之一。自旋扭矩传递 (STT)、自旋轨道扭矩 (SOT) 和电场辅助切换机制已被用于切换各种自旋电子器件中的磁化。然而，它们的运行速度从根本上受到通常在 10-400 ps 范围内的自旋进动时间的限制。这种时间限制严重限制了这些设备在高速系统中的可能操作。另一方面，使用超短激光脉冲的光开关能够在磁隧道结 (MTJ) 中实现亚皮秒开关操作。在本文中，全光开关 (AOS) MTJ 已被用于设计基于高速和低功耗混合 MTJ/CMOS 的逻辑电路，例如 AND/NAND、XOR/XNOR、和全加器。由于 AOS-MTJ 的超快开关操作，电路级结果表明，与基于 STT 的电路相比，基于 AOS-MTJ 的逻辑电路的能量和速度分别提高了 85% 和 97%。与基于 SOT 的设计相比，所提出的逻辑电路在能效和速度方面分别提高了 10% 和 91%。