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Tunning the dielectric and energy storage properties of high entropy ceramics (Bi0.2Na0.2K0.2La0.2Sr0.2)(Ti1-xScx)O3 by Sc-doping at B-site in perovskite structure
Journal of Electroceramics ( IF 1.7 ) Pub Date : 2022-08-04 , DOI: 10.1007/s10832-022-00292-9
Wentao Yang , Guangping Zheng

The (Bi0.2Na0.2K0.2La0.2Sr0.2)(Ti1-xScx)O3 (BNKLST-xSc) high entropy ceramics (HECs) have been successfully synthesized via a citrate acid method. The effects of Sc-doping on the lattice structure, microstructural morphology, dielectric and energy-storage properties of HECs are comprehensively investigated. The results indicate that although Sc3+ doped at B-site does not alternate the perovskite structure of BNKLST with a single phase, it results in lattice expansion and weakened bonding in TiO6 octahedron. The dielectric constant of BNKLST-xSc is reduced while the dielectric relaxation is enhanced with increasing Sc content x, due to the enhanced structural inhomogeneity in nano-regions. In addition, the lattice structure of BNKLST-0.2Sc exhibits ultra-high thermal stability at 30–300 °C, which achieves the maximum energy storage density of 1.094 J/cm3 with an outstanding efficiency better than 80%, accompanying by the mechanical and dielectric losses as low as ~ 10–3. It is suggested that BNKLST-0.2Sc could be promising dielectric materials in capacitors and energy-storage devices with an excellent combination of ultrahigh power density, high energy density, thermal stability as well as low mechanical and dielectric losses.



中文翻译:

通过在钙钛矿结构中的 B 位掺杂 Sc 来调节高熵陶瓷 (Bi0.2Na0.2K0.2La0.2Sr0.2)(Ti1-xScx)O3 的介电和储能性能

通过柠檬酸法成功合成了(Bi 0.2 Na 0.2 K 0.2 La 0.2 Sr 0.2 )(Ti 1-x Sc x )O 3 (BNKLST- x Sc)高熵陶瓷(HECs)。全面研究了Sc掺杂对HECs的晶格结构、微观结构形态、介电和储能性能的影响。结果表明,虽然在B位掺杂的Sc 3+不会使BNKLST的钙钛矿结构与单相交替,但会导致TiO 6八面体中的晶格膨胀和键合减弱。BNKLST- x的介电常数由于纳米区域中增强的结构不均匀性,Sc 降低,而介电弛豫随着 Sc 含量x的增加而增强。此外,BNKLST-0.2Sc 的晶格结构在 30-300 ℃下表现出超高的热稳定性,最大​​储能密度为 1.094 J/cm 3,效率优于 80%,伴随着机械和介电损耗低至 ~ 10 –3。BNKLST-0.2Sc 具有超高功率密度、高能量密度、热稳定性以及低机械和介电损耗的优异组合,有望成为电容器和储能器件中很有前途的介电材料。

更新日期:2022-08-04
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