Purpose

The purpose of this paper is to develop a model that allows determining the boron concentration profile in silicon based on duration and temperature of the diffusion process.

Design/methodology/approach

The model was developed on the basis of the Fick’s second law, which is fundamental for describing the diffusion process. The explicit scheme of the finite difference method was used in the conducted simulations. Results of measurements made using the secondary ion mass spectrometry (SIMS) were used as template dopant concentration profiles. Solution of boric acid in ethanol is the dopant source for which this model was developed.

Findings

Based on the conducted simulations, it was proposed that besides the influence of electric field of ionized dopants, which is already described in literature, an appropriate factor reflecting the influence of the threshold concentration on the coefficient of diffusion of boron in silicone should also be introduced.

Originality/value

The developed model enables determination of the boron concentration profile in silicon consistent with the results of SIMS measurements. A factor taking into account the influence of threshold concentration on the coefficient of diffusion was introduced. The influence of concentration of boric acid in the dopant solution on the concentration profile was also considered.

中文翻译：

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基于硼酸溶液的用于太阳能电池制造的硅中硼扩散模型

目的

本文的目的是开发一个模型，可以根据扩散过程的持续时间和温度确定硅中的硼浓度分布。

设计/方法论/途径

该模型是根据菲克第二定律开发的，该定律是描述扩散过程的基础。仿真中使用了有限差分法的显式格式。使用二次离子质谱法 (SIMS) 进行的测量结果用作模板掺杂剂浓度分布。硼酸的乙醇溶液是开发该模型的掺杂剂源。

发现

基于所进行的模拟，提出除了文献中已经描述的电离掺杂剂电场的影响外，还应该引入反映阈值浓度对硅酮中硼扩散系数影响的适当因素。

原创性/价值

开发的模型能够确定硅中硼浓度分布，与 SIMS 测量结果一致。引入了考虑阈值浓度对扩散系数影响的因素。还考虑了掺杂剂溶液中硼酸浓度对浓度分布的影响。