We report a complementary metal oxide semiconductor (CMOS) compatible metamaterial-based spectrally selective absorber/emitter (MBSSAE) for infrared (IR) stealth, which has the low absorption/emissivity in the IR atmospheric transmission window (3 µm–5 µm, 8 µm–14 µm) and ultra-high and broadband absorption/emissivity in the IR non-atmospheric window (5 µm–8 µm). We propose a novel method for the broadband absorption/emissivity in 5 µm–8 µm with incorporation of an epsilon-near-zero (ENZ) material between the top patterned aluminum (Al) disks layer and the silicon oxide (SiO₂) spacer layer. With an appropriate design, the peaks in the IR atmospheric transmission window can be suppressed while the peak intensity in the non-atmospheric window remains high. The optimized MBSSAE has an average absorption/emissivity less than 10% in 8 µm–14 µm and less than 6% in 3 µm–5 µm. And the average absorption/emissivity in 5 µm–8 µm is approximately over 64%. This proposed scheme may introduce the opportunities for the large-area and low-cost infrared stealth coating, as well as for the radiative cooling, spectral selective thermal detector, optical sensor, and thermophotovoltaic applications.

我们报告了一种互补金属氧化物半导体 (CMOS) 兼容的基于超材料的光谱选择性吸收器/发射器 (MBSSAE)，用于红外 (IR) 隐形，它在红外大气透射窗口 (3 µm–5 µm, 8 µm–14 µm) 和 IR 非大气窗口 (5 µm–8 µm) 中的超高和宽带吸收/发射率。我们提出了一种用于 5 µm–8 µm 宽带吸收/发射率的新方法，在顶部图案化铝 (Al) 圆盘层和氧化硅 (SiO ₂) 间隔层。通过适当的设计，可以抑制 IR 大气透射窗口中的峰值，而非大气窗口中的峰值强度仍然很高。优化的 MBSSAE 在 8 µm–14 µm 中的平均吸收/发射率小于 10%，在 3 µm–5 µm 中小于 6%。5 µm–8 µm 的平均吸收/发射率约为 64% 以上。该提议的方案可能会为大面积和低成本的红外隐形涂层以及辐射冷却、光谱选择性热探测器、光学传感器和热光伏应用带来机会。