To accomplish a high-temperature operation of GaN/InGaN multiple-quantum-well (MQW) UV photodetectors (UV-PDs), the investigation of device performances at high-temperature regimes is truly essential. Therefore, in the present work, GaN/InGaN MQW-based UV-PDs on sapphire are fabricated and their photovoltaic and carrier transit time characteristics are investigated at different temperatures. Our results suggest that the temperature has a strong impact on various photovoltaic properties: we noticed an increase in short circuit current density and a significant lowering in open circuit voltage and power conversion efficiency when the ambient temperature increases from 25 to 300 °C. The time-dependent photo-response characteristics at different temperatures suggest that both the rise time and fall time are reduced at high temperatures, indicating the thermal activation of localized charges at an exacerbated temperature.

中文翻译：

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在蓝宝石衬底上制造的 GaN/InGaN 多量子阱紫外光电探测器的高温特性：光伏和载流子渡越时间特性分析

为了实现 GaN/InGaN 多量子阱 (MQW) 紫外光电探测器 (UV-PD) 的高温运行，研究器件在高温条件下的性能非常重要。因此，在目前的工作中，在蓝宝石上制造了基于 GaN/InGaN MQW 的 UV-PD，并研究了它们在不同温度下的光伏和载流子渡越时间特性。我们的结果表明，温度对各种光伏特性有很大影响：我们注意到当环境温度从 25 °C 升高到 300 °C 时，短路电流密度会增加，开路电压和功率转换效率会显着降低。不同温度下随时间变化的光响应特性表明，上升时间和下降时间在高温下都会减少，