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Design and Analysis of Ultralow Voltage Graphene on the Silicon Rich Nitride Tunable Ring Resonator-Based Add-Drop Filter for DWDM Systems
International Journal of Optics ( IF 1.7 ) Pub Date : 2022-12-9 , DOI: 10.1155/2022/4182037
Filston Rukerandanga 1 , Stephen Musyoki 2 , Edwin O. Ataro 2
Affiliation  

We propose and simulate a third-order 3D electro-optically highly tunable compact add-drop filter based on nonlinear microring resonators. The used tuning mechanism relies on enhanced Kerr nonlinearity in a graphene layer integrated on top of a two-photonabsorption-free and low loss silicon-rich nitride core material at telecommunication wavelengths. An ultrahigh tuning efficiency (150 pm/V) over a tuning range of 1.3 nm, ensuring ultralow voltage consumption, was achieved in this work. We used titanium oxide and silicon oxide as the upper-cladding and under-cladding materials, respectively, around the silicon-rich nitride core material, to come up with a polarization-insensitive, and the thermally resilient third-orderadd-drop optical filter in the L band (1565 nm–1625 nm) with a full wave at a half maximum bandwidth of 50 GHz (linewidth of 0.4 nm) around 1570 nm, a high-free spectral range of 18.5 nm, a quality factor of 2580, an extinction ratio of 60 dB, a finesse of 19, and a thermal stability of 0.3 pm/K. A three-dimensional multiphysics approach was used to simulate the propagation of transverse electric and transverse magnetic polarized waves through the filter, combining the electromagnetic features with thermo-optic and stress-optical effects. The contribution of this work to the existing literature is that the designed filter proposes a new and highly tunable material system compatible with the complementary metal-oxide-semiconductor fabrication technology while combining high tunability, polarization insensitivity, and high thermal stability features for an ultracompact and energy-efficienton-chip integrated photonic tunable filter for dense wavelength division multiplexing systems in the less occupied L band.

中文翻译:

用于 DWDM 系统的基于富氮化硅可调环形谐振器的分插滤波器的超低压石墨烯设计与分析

我们提出并模拟了基于非线性微环谐振器的三阶 3D 电光高度可调谐紧凑型分插滤波器。所使用的调谐机制依赖于石墨烯层中增强的克尔非线性,该石墨烯层集成在电信波长的无双光吸收和低损耗的富硅氮化物核心材料之上。在这项工作中实现了 1.3 nm 调谐范围内的超高调谐效率 (150 pm/V),确保超低电压消耗。我们分别使用氧化钛和氧化硅作为上包层和下包层材料,围绕富硅氮化物芯材,研制出偏振不敏感、热弹性三阶分插光滤波器。 L 波段 (1565 nm–1625 nm),全波半最大带宽为 50 GHz(线宽为 0. 4 nm) 约 1570 nm,高自由光谱范围 18.5 nm,品质因数 2580,消光比 60 dB,精细度 19,热稳定性 0.3 pm/K。三维多物理场方法用于模拟横向电场和横向磁极化波通过滤波器的传播,将电磁特征与热光和应力光效应相结合。这项工作对现有文献的贡献在于,设计的滤波器提出了一种新的高度可调的材料系统,与互补金属氧化物半导体制造技术兼容,同时结合了高可调性、偏振不敏感性、L乐队。
更新日期:2022-12-09
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