Abstract

In graphene electronics applications, in order to obtain the size and pattern required for the device, it is often necessary to photolithography the graphene after growth, resulting in contamination of graphene by the photoresist which have doping effect. Therefore, in order to avoid this effect, this article focused on directly grown patterned graphene. Based on atmospheric pressure chemical vapour deposition (APCVD) technology, patterned graphene was successfully grown on SiO₂/Si by metal proximity catalytic effect. The patterned graphene was characterized by Raman spectroscopy and optical microscope. The effects of parameters such as gas flow, growth temperature, and growth time on the growth of patterned graphene were explored, and the best results were obtained. Metal copper and cobalt thin films were used for assisted catalysis, respectively, and the mechanism of metal proximity catalysis was explored. The experimental results showed that proximity catalysis is a catalytic growth mechanism based on surface diffusion. The growth method avoids using photolithography to make patterns, and can grow patterned graphene on insulating substrates or semiconductors in one step, which is of great significance for making patterned graphene and applying them to semiconductor devices.

摘要

在石墨烯电子应用中，为了获得器件所需的尺寸和图形，往往需要对生长后的石墨烯进行光刻，导致具有掺杂作用的光刻胶污染石墨烯。因此，为了避免这种影响，本文主要关注直接生长的图案化石墨烯。基于常压化学气相沉积（APCVD）技术，在SiO _{2上成功生长图案化石墨烯}/Si受金属邻近催化作用。图案化的石墨烯通过拉曼光谱和光学显微镜表征。探讨了气体流量、生长温度、生长时间等参数对图案化石墨烯生长的影响，取得了最好的结果。分别采用金属铜和钴薄膜进行辅助催化，探索了金属邻近催化的机理。实验结果表明，邻近催化是一种基于表面扩散的催化生长机制。该生长方法避免了使用光刻法制作图案，可以一步在绝缘基板或半导体上生长出图案化石墨烯，对于制作图案化石墨烯并将其应用于半导体器件具有重要意义。