Design, fabrication, and characterization of close-packed field emitter tips enclosed in an Si trench and stand-alone arrays are presented. The two types of field emitter arrays (FEAs) are fabricated using a combination of high-throughput electron-beam lithography, plasma etching, and anode bonding integration technology. The field emitter array inside the trench shows a higher turn-on voltage compared to the stand-alone array. Without any tip sharpening, a current of 7.5 $\mu$A was observed at 300 V from FEAs inside the trench, while a higher current of 12.5 $\mu$A was observed at the same voltage for the stand-alone array.

中文翻译：

---

通过电子束光刻制造的具有集成阳极的密排硅场发射器阵列

介绍了封闭在 Si 沟槽和独立阵列中的密排场发射体尖端的设计、制造和表征。这两种类型的场发射器阵列 (FEA) 是结合高通量电子束光刻、等离子蚀刻和阳极键合集成技术制造的。与独立阵列相比，沟槽内的场发射体阵列显示出更高的开启电压。没有任何尖端锐化，电流为 7.5 $\mu$从沟槽内的 FEA 在 300 V 观察到 A，而更高的电流为 12.5 $\mu$对于独立阵列，在相同电压下观察到 A。