In modern extreme ultraviolet (EUV) lithography machines, sensitive optical components, such as multilayer mirrors and photomasks, may be affected by plasma interactions. The new 13.5 nm EUV-beam-line 2, designed to provide accelerated tests for next generation lithography, is used to investigate EUV-induced plasma phenomena. First systematic measurements of ion fluxes produced in EUV-induced hydrogen plasma are reported, with operating conditions including 5 and 20 Pa gas pressure, 3 kHz EUV pulse repetition rate, and 4.2 W total EUV beam power produced in a 10–15 ns EUV pulse. Space- and time-resolved distributions of ion fluxes and ion energies were measured using a retarding-field ion energy analyzer mounted next to the EUV beam. Typical ion energies were in the range of 1–8 eV and typical ion fluxes were in the range of 2–8 × 10¹⁷ ions m⁻² s⁻¹. The obtained ion fluxes are applied in a photomask lifetime test to understand the material effects after an EUV exposure.

中文翻译：

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新型 EUV 光束线 2 纳米光刻研究机极紫外诱导等离子体中离子通量的测量及其在光学元件测试中的应用

在现代极紫外 (EUV) 光刻机中，多层反射镜和光掩模等敏感光学元件可能会受到等离子体相互作用的影响。新的 13.5 nm EUV 光束线 2 旨在为下一代光刻提供加速测试，用于研究 EUV 引起的等离子体现象。首次系统测量 EUV 诱导的氢等离子体中产生的离子通量，操作条件包括 5 和 20 Pa 气压、3 kHz EUV 脉冲重复率和 4.2 W 总 EUV 光束功率在 10-15 ns EUV 脉冲中产生. 使用安装在 EUV 光束旁边的延迟场离子能量分析仪测量离子通量和离子能量的空间和时间分辨分布。典型的离子能量在 1–8 eV 的范围内，典型的离子通量在 2–8 × 10¹⁷ 离子m ^-2  s ^-1。获得的离子通量应用于光掩模寿命测试，以了解 EUV 曝光后的材料效果。