In ArF immersion lithography, the presence of immersion liquid between the resist surface and the lens causes problems, such as the leaching of the photoacid generator into the liquid and the presence of residual liquid on the resist surface, which can result in watermarks and other defects. One method to address such issues is adding an F-based compound with low dry-etch resistance to the resist. In the present study, we developed a novel resist for ArF immersion exposure that replaces the F compound with an Si (dimethylpolysiloxane)-based additive to enhance dry-etch resistance. We experimentally evaluated contact angles with respect to water and developer solution, depth concentration of the additives (segregation), agent dissolution (leaching), dry-etch resistance, and spectral transmittance of the comparative resists. Simulation studies were performed to evaluate pattern profiles. The developed resist with the Si-based additive showed improved properties compared with that with the F-based additive.

中文翻译：

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添加Si化合物对193nm浸胶表面性能的控制

在 ArF 浸没式光刻中，抗蚀剂表面和透镜之间存在浸没液体会导致问题，例如光致产酸剂浸入液体中以及抗蚀剂表面存在残留液体，这会导致水印和其他缺陷. 解决此类问题的一种方法是向抗蚀剂中添加具有低干蚀刻抗性的氟基化合物。在本研究中，我们开发了一种用于 ArF 浸没式曝光的新型抗蚀剂，该抗蚀剂用基于 Si（二甲基聚硅氧烷）的添加剂代替 F 化合物，以增强耐干蚀刻性。我们通过实验评估了相对于水和显影剂溶液的接触角、添加剂的深度浓度（偏析）、试剂溶解（浸出）、抗干蚀刻性和比较抗蚀剂的光谱透射率。进行了模拟研究以评估模式配置文件。与基于 F 的添加剂相比，使用基于 Si 的添加剂开发的抗蚀剂显示出更好的性能。