We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb-blockade region. The cotunneling current appears like a resonant-tunneling current peak emerging from the excited state and sustain within the blockade regions. These cotunneling features are unique, since the inelastic-cotunneling currents have so far been reported either as a broader hump or as a continuous increment of current. This finding is ascribed purely due to excitation-related inelastic cotunneling involving the ground and excited states. Theoretical calculations were performed for a two-level quantum dot, supporting our experimental observation.

中文翻译：

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施主原子晶体管库仑阻塞输运中的非弹性共隧穿

我们报告了在硅纳米级晶体管中通过磷供体的电传输的有限偏置特性，我们在其中观察到库仑阻塞区域中的非弹性共隧穿电流。共隧穿电流看起来像从激发态出现的共振-隧穿电流峰值，并在封锁区域内维持。这些共隧道特征是独一无二的，因为到目前为止，非弹性共隧道电流被报告为更宽的驼峰或电流的连续增量。这一发现完全归因于涉及基态和激发态的与激发相关的非弹性共隧道效应。对两级量子点进行了理论计算，支持我们的实验观察。