Schottky contacts on fluorine implanted AlGaN/GaN heterostructures with the ideality factor close to unity and low on-voltage threshold are presented in this paper. An SF₆ plasma anode pretreatment followed by a specific low-temperature annealing is also compared to a nonannealed sample. In addition, physical-model parameters are extracted by means of cryogenic temperature measurements to understand the conduction mechanisms involved in annealed diodes, showing better DC performances than their nonannealed counterparts. Furthermore, annealing induces a decrease of the ideality factor, which sets the field-enhanced thermionic emission as the main conduction mechanism, and reduces the tunneling reverse current leakage. This effect is attributed to the recovery of the plasma-induced damages.

中文翻译：

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SF6 处理的 AlGaN/GaN 肖特基势垒二极管的制造、直流和低温分析

本文介绍了具有接近统一的理想因子和低导通电压阈值的氟注入 AlGaN/GaN 异质结构上的肖特基接触。还将SF ₆等离子体阳极预处理后进行特定的低温退火与未退火的样品进行比较。此外，通过低温测量提取物理模型参数，以了解退火二极管中涉及的传导机制，显示出比非退火二极管更好的直流性能。此外，退火导致理想因子的降低，将场增强热电子发射设置为主要传导机制，并减少隧道反向电流泄漏。这种效果归因于等离子体引起的损伤的恢复。