This paper presents a new design of charge plasma junctionless tunnel field effect transistor (CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. The cavity length is varied between 8 nm and 10 nm and different dielectric constants have been used. This increased the ON state performance of device i.e ON drive current, potential and electric field. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed device simulated their electrical parameters like drain current, surface potentials, electric field, and energy bands with different dielectric constants. These excellent performance parameters of the proposed device with an appropriate material can be used for sensing application of biomolecules by introducing a cavity in the device.

中文翻译：

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用于生物传感器应用的电荷等离子体无结 TFET 的设计和参数分析

本文介绍了一种新设计的电荷等离子体无结隧道场效应晶体管 (CP JLTFET)，具有改进的导通电流和表面电位。为了便于制造，使用适当的金属功函数在本征硅材料中引入源极和漏极区域。在提议的 CP JLTFET 的情况下，发现电子的隧穿速率更高。腔长在 8 nm 和 10 nm 之间变化，并且使用了不同的介电常数。这增加了器件的导通状态性能，即导通驱动电流、电势和电场。电子隧穿的增加主要是由于沟道区载流子的高度复合。拟议的设备模拟了它们的电气参数，如漏极电流、表面电位、电场和具有不同介电常数的能带。