This work aimed to modify the surface properties of polydimethylsiloxane (PDMS) for use in optoelectronic devices by utilizing a handmade ion source. PDMS films were exposed to hydrogen fluences of 6 × 10¹⁷, 9 × 10¹⁷ and 12 × 10¹⁷ ions/cm². X-ray diffraction and Fourier transform infrared spectroscopy were used to reveal the changes in PDMS after irradiation. Similarly, scanning electron microscopy was employed to examine the morphological alterations of irradiated surfaces. The bandgaps and band tails of pristine and treated films were estimated using Tauc’s methodology. When the hydrogen fluence was increased from 6 × 10¹⁷ to 12 × 10¹⁷ ions/cm², the bandgap lowered from 5.06 to 4.86 eV. Furthermore, the band tail energy improved from 0.53 eV for PDMS to 0.55 eV for 6 × 10¹⁷ ions/cm² and to 0.63 eV for 9 × 10¹⁷ ions/cm². In addition, the dispersion characteristics of PDMS were estimated using the Wemple–DiDomenico method. Moreover, the extinction coefficients and refractive indices were calculated. The recorded relaxation time reduced from 2.06 × 10⁻⁷ to 1.65 × 10⁻⁷ s when the ion fluence was enhanced from 6 × 10¹⁷ to 12 × 10¹⁷ ions/cm². According to the results found, ion beam irradiation induces modifications in irradiated films for use in optical devices.

中文翻译：

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辐照柔性 PDMS 材料的表面改性和光学研究

这项工作旨在通过利用手工离子源修改聚二甲基硅氧烷 (PDMS) 的表面特性，以用于光电设备。PDMS 薄膜暴露于 6 × 10 ¹⁷、9 × 10 ¹⁷和 12 × 10 ¹⁷ 离子/cm ²的氢注量。X 射线衍射和傅里叶变换红外光谱用于揭示照射后 PDMS 的变化。同样，扫描电子显微镜被用来检查受照射表面的形态变化。使用 Tauc 的方法估计原始薄膜和处理过的薄膜的带隙和带尾。当氢注量从 6 × 10 ¹⁷增加到 12 × 10 ¹⁷  ions/cm ²，带隙从 5.06 降低到 4.86 eV。此外，带尾能量从 PDMS 的 0.53 eV 提高到 6 × 10 ¹⁷  ions/cm ²的 0.55 eV和 9 × 10 ¹⁷  ions/cm ²的 0.63 eV 。此外，使用 Wemple–DiDomenico 方法估计 PDMS 的分散特性。此外，计算了消光系数和折射率。 当离子注量从 6 × 10 ¹⁷增加到12 × 10 ¹⁷ 离子/cm ²时，记录的弛豫时间从 2.06 × 10 -7 减少^到1.65 × 10 -7 s. 根据发现的结果，离子束辐照会导致用于光学器件的辐照薄膜发生改性。