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Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films
Electronics and Communications in Japan ( IF 0.3 ) Pub Date : 2023-02-09 , DOI: 10.1002/ecj.12386
Tomofumi Mizuyama 1 , Hiroaki Nishikawa 2
Affiliation  

Epitaxial thin films of a ferroelectric perovskite-type oxide grown on single-crystalline SrTiO3 (100) were transferred onto a flexible printed circuit (FPC). In the case that the thin films were directly adhered onto FPC using a copper foil double-coated conductive adhesive tape (Cu double-sided tape), serious cracking and exfoliation occurred during the transfer process. To avoid these damages, we have tried to insert a metal buffer layer with excellent ductility between the ferroelectric oxide thin film and the Cu double-sided tape. The platinum buffer layer was found to be appropriate to establish a crack- and exfoliation-free transfer process.

中文翻译:

铂缓冲层对柔性铁电外延薄膜制备工艺的影响

在单晶 SrTiO 3 (100) 上生长的铁电钙钛矿型氧化物的外延薄膜被转移到柔性印刷电路 (FPC) 上。在使用铜箔双面导电胶带(Cu双面胶带)将薄膜直接粘贴到FPC上的情况下,在转移过程中出现了严重的开裂和剥落。为了避免这些损坏,我们尝试在铁电氧化物薄膜和铜双面胶带之间插入延展性极佳的金属缓冲层。发现铂缓冲层适合建立无裂纹和无剥落的转移过程。
更新日期:2023-02-09
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