Abstract

Consecutive stages of synthesizing epitaxial SiC films on n-type Si(111) and p-type Si(111) surfaces in a mixture of gaseous carbon monoxide and silane are studied by X-ray diffraction and Raman scattering methods. In films grown on an n-type Si(111) surface, only weak elastic deformations are observed during synthesis; however, in films grown on p-type Si substrates, relatively strong elastic deformations form, which are completely relaxed by the 40th min. It is found that the film structure is sharply changed at the third minute of the growth, which is related to the formation and growth of pores in the SiC layer. The differences of the lattice parameters of SiC films grown on n-Si and p-Si substrates are determined and confirmed by analyzing the change in the curvatures of the SiC/Si plates.

中文翻译：

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Si 衬底上配位原子取代法生长过程中 SiC 薄膜弹性变形的变化

摘要

通过 X 射线衍射和拉曼散射方法研究了在气态一氧化碳和硅烷的混合物中在n型 Si(111) 和p型 Si(111) 表面上合成外延 SiC 薄膜的连续阶段。在n型 Si(111) 表面上生长的薄膜，在合成过程中仅观察到微弱的弹性变形；然而，在p型 Si 衬底上生长的薄膜中，形成了相对强的弹性变形，在第 40 分钟时完全松弛。发现在生长的第三分钟薄膜结构发生急剧变化，这与SiC层中孔隙的形成和生长有关。n -Si和p上生长的SiC薄膜晶格参数的差异-通过分析 SiC/Si 板的曲率变化来确定和确认 Si 衬底。