We present a germanium “Ge-on-Si” CMOS image sensor with backside illumination for the near-infrared (NIR) electromagnetic waves (wavelength range 300 to 1700 nm) detection essential for optical sensor technology. The microholes help to enhance the optical efficiency and extend the range to the 1.7-μm wavelength. We demonstrate an optimization for the width and depth of the microholes for maximal absorption in the NIR. We show a reduction in the crosstalk by employing thin SiO2 deep trench isolation in between the pixels. Finally, we show a 26 to 50% reduction in the device capacitance with the introduction of a microhole. Such CMOS-compatible Ge-on-Si sensors will enable high-density, ultrafast, and efficient NIR imaging.

中文翻译：

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用于薄 Ge-on-Si 互补金属氧化物半导体图像传感器的每像素单个微孔，具有高达 1700 nm 的增强灵敏度

我们展示了一种带有背面照明的锗“Ge-on-Si”CMOS 图像传感器，用于检测光学传感器技术所必需的近红外 (NIR) 电磁波（波长范围 300 至 1700 nm）。微孔有助于提高光学效率并将范围扩展到 1.7 μm 波长。我们展示了微孔宽度和深度的优化，以在 NIR 中实现最大吸收。我们展示了通过在像素之间采用薄的 SiO2 深沟槽隔离来减少串扰。最后，我们展示了引入微孔后器件电容降低了 26% 到 50%。这种与 CMOS 兼容的硅基锗传感器将实现高密度、超快和高效的 NIR 成像。