In this paper, the problem of depth profiling analysis of nanoscale heterostructures containing doped delta layers and quantum wells using the SIMS method is considered. Based on computer simulation data and previously obtained experimental data, we demonstrated that the RMR model most accurately and completely describes the redistribution of the analyzed element in ultrathin layers that occurs during ion sputtering. A comparative analysis of the surface roughness–ion mixing–recoil implantation (RMR) model with MRI (mixing-roughness-information depth) and UDS (up-and-down slope) models proposed by Hoffman and Dowsett, respectively, was performed. It was shown that the introduction into the MRI model of a parameter describing some layer of constant thickness, in which the components of the analyzed layer and matrix elements are uniformly mixed, is not quite justified. It is concluded that during depth profiling of a monoatomic layer, the center of mass of this layer shifts away from the surface, as predicted by the RMR model, rather than toward the surface, as predicted by the MRI model. It is found that preferential sputtering does not affect the experimental depth distribution of elements obtained by the SIMS method.

中文翻译：

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在 RMR 模型框架中使用深度分辨率函数从实验 SIMS 剖面恢复原始深度分布

在本文中，考虑了使用 SIMS 方法对包含掺杂 delta 层和量子阱的纳米级异质结构进行深度剖面分析的问题。基于计算机模拟数据和先前获得的实验数据，我们证明了 RMR 模型最准确和完整地描述了离子溅射期间发生的超薄层中分析元素的重新分布。对表面粗糙度-离子混合-反冲注入 (RMR) 模型与 Hoffman 和 Dowsett 分别提出的 MRI（混合粗糙度信息深度）和 UDS（上下斜率）模型进行了比较分析。结果表明，在 MRI 模型中引入一个参数来描述一些恒定厚度的层，其中被分析层的成分和矩阵元素均匀混合，不太合理。得出的结论是，在单原子层的深度剖析过程中，该层的质心如 RMR 模型所预测的那样偏离表面，而不是像 MRI 模型所预测的那样移向表面。发现优先溅射不影响通过SIMS方法获得的元素的实验深度分布。