Silicon gated field emitter arrays have been used as a vacuum transistor to demonstrate a 152 kHz Colpitts oscillator. The transfer and output characteristics of the 1000 × 1000 silicon arrays were measured using a collector placed ≈ 1 mm away with a gate voltage up to 40 V and a collector voltage up to 200 V. The data were used to establish an LTspice transistor model based on a field emission tip model and a collector current model that fit the characteristics. Then, the LTspice model was used to design a low frequency Colpitts oscillator. Furthermore, experiments were carried out to successfully demonstrate the oscillation. Oscillation frequency was 152 kHz with a peak to peak voltage of 25 V for a tip to ground series resistance value of 10 kΩ at 50 V on the gate and 210 V on the collector. Further, the oscillator was also tested at 50, 100, 200, 300, and 400 °C. It was observed that frequency shifts for each temperature which is due to the change in the overall capacitance of the test setup. This type of device could be used as a temperature sensor in harsh environments.

中文翻译：

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400 °C 下基于硅栅场发射器阵列的低频 Colpitts 振荡器的演示

硅门控场发射器阵列已被用作真空晶体管来演示 152 kHz 的 Colpitts 振荡器。1000 × 1000 硅阵列的传输和输出特性是使用放置在 ≈ 1 mm 外的集电极测量的，栅极电压高达 40 V，集电极电压高达 200 V。数据用于建立基于 LTspice 晶体管模型在适合该特性的场发射尖端模型和集电极电流模型上。然后，使用 LTspice 模型设计低频 Colpitts 振荡器。此外，还进行了实验以成功证明振荡。振荡频率为 152 kHz，峰峰值电压为 25 V，尖端对地串联电阻值为 10 kΩ，栅极电压为 50 V，集电极电压为 210 V。此外，振荡器还在 50、100、200、300 和 400 °C。据观察，由于测试装置的总电容发生变化，每个温度的频率都会发生偏移。这种类型的设备可以用作恶劣环境中的温度传感器。