Roll-to-roll (R2R) nanofabrication processes are recognized as key enabling-technologies for many next-generation applications in flexible electronics, displays, energy generation, storage, as well as healthcare. However, R2R processing techniques reported in the literature currently lack a scalable method of performing high-throughput nanoscale pattern transfer of geometry requiring a high degree of fidelity in terms of critical dimension resolution, etch uniformity, and aspect ratio. Reactive ion etching (RIE) addresses the need for sub-10 nm pattern transfer with large-area uniformity in wafer-scale semiconductor manufacturing, but adapting plasma etch systems for use in R2R nanopatterning has proven to be nontrivial. Moreover, robust models for simulating R2R RIE do not exist, which is an obstacle to the creation of computational approaches to design, control, and scale-up of nanoscale R2R equipment and processes. To address these challenges, we demonstrate a process flow for fabricating Si nanopillar arrays utilizing a combination of nanoimprint lithography and RIE with all pattern transfer steps performed using a R2R plasma reactor system. Specifically discussed are process development details for etching imprint resist and Si including etch rates, cross-web etch uniformity, etch directionality, and etch selectivity at varying gas chemistries, powers, and pressures. 2^k full-factorial Design of Experiments (DoEs) and ordinary least-squares regression analysis are also employed to study influence of process parameters on multiple outgoing etch quality characteristics and generate stochastic models of the R2R RIE pattern transfer process into Si. Utilizing these DOE-based models and desired targets for etch quality characteristics, we describe a bounded multivariate inverse-optimization scheme for automated etch process parameter tuning. The culmination of these efforts, to the best of the authors' knowledge, is the first reported RIE-based pattern transfer of 100 nm-scale features performed in continuous R2R fashion with control of feature geometry over large area. The methodology employed herein may be applied similarly to additional materials and geometries for future applications.

中文翻译：

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硅中大面积纳米结构阵列的卷对卷反应离子蚀刻：工艺开发、表征和优化

卷对卷 (R2R) 纳米加工工艺被认为是柔性电子、显示器、能源生产、存储以及医疗保健领域许多下一代应用的关键支持技术。然而，文献中报道的 R2R 处理技术目前缺乏一种可扩展的方法来执行几何的高通量纳米级图案转移，需要在关键尺寸分辨率、蚀刻均匀性和纵横比方面具有高度保真度。反应离子蚀刻 (RIE) 解决了在晶圆级半导体制造中具有大面积均匀性的亚 10 纳米图案转移的需求，但事实证明，将等离子蚀刻系统用于 R2R 纳米图案化并非易事。此外，不存在用于模拟 R2R RIE 的稳健模型，这阻碍了创建用于设计、控制和扩大纳米级 R2R 设备和工艺的计算方法。为了应对这些挑战，我们展示了利用纳米压印光刻和 RIE 的组合制造 Si 纳米柱阵列的工艺流程，所有图案转移步骤均使用 R2R 等离子体反应器系统执行。具体讨论了刻蚀压印抗蚀剂和 Si 的工艺开发细节，包括刻蚀速率、跨网刻蚀均匀性、刻蚀方向性和在不同气体化学成分、功率和压力下的刻蚀选择性。2个 我们演示了利用纳米压印光刻和 RIE 的组合制造 Si 纳米柱阵列的工艺流程，所有图案转移步骤均使用 R2R 等离子体反应器系统执行。具体讨论了刻蚀压印抗蚀剂和 Si 的工艺开发细节，包括刻蚀速率、跨网刻蚀均匀性、刻蚀方向性和在不同气体化学成分、功率和压力下的刻蚀选择性。2个 我们演示了利用纳米压印光刻和 RIE 的组合制造 Si 纳米柱阵列的工艺流程，所有图案转移步骤均使用 R2R 等离子体反应器系统执行。具体讨论了刻蚀压印抗蚀剂和 Si 的工艺开发细节，包括刻蚀速率、跨网刻蚀均匀性、刻蚀方向性和在不同气体化学成分、功率和压力下的刻蚀选择性。2个^k全因子实验设计 (DoE) 和普通最小二乘回归分析也用于研究工艺参数对多个输出蚀刻质量特性的影响，并生成 R2R RIE 图案转移过程到 Si 的随机模型。利用这些基于 DOE 的模型和蚀刻质量特性的预期目标，我们描述了一种用于自动蚀刻工艺参数调整的有界多元逆优化方案。据作者所知，这些努力的最终结果是首次报道了基于 RIE 的 100 nm 尺度特征图案转移，以连续 R2R 方式执行，并控制大面积的特征几何形状。本文采用的方法可以类似地应用于其他材料和几何形状以供将来应用。