The mechanisms of plasma-enhanced chemical vapor deposition using tetraethoxysilane (TEOS)-based plasma were investigated by monitoring the plasma via experimental and computational approaches using a quadrupole mass spectrometer/residual gas analyzer and coupled plasma-gas flow simulation. For experimental measurements, plasma was generated from a TEOS/inert gas mixture, that is, Ar/TEOS or He/TEOS. The results showed that a larger number of TEOS fragments (i.e., silicon complex species) were generated in the He/TEOS plasma than in the Ar/TEOS plasma. Plasma simulation showed that the He/TEOS plasma has a higher electron temperature than the Ar/TEOS plasma, enhancing the dissociation reactions by electron impact. The spatial distributions of TEOS fragments of this mixture observed in the plasma simulation showed that the number of TEOS fragments reaching the wafer surface increased as the O₂ ratio of the gas mixture increased. However, a further increase in the O₂ flow rate beyond a certain ratio caused the number of signals to decrease. This is attributed to the changes in the determining step from the gas-phase reaction of SiO production to the diffusion of SiO from the portion near the inlet. We also found that metastable species such as Ar*, O₂*, and O* are the main contributors to the generation of atomic oxygen (O), which is closely related to the high deposition rate.

中文翻译：

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了解基于四乙氧基硅烷的等离子体中的等离子体增强化学气相沉积机制

通过使用四极质谱仪/残余气体分析仪和耦合等离子体-气流模拟的实验和计算方法监测等离子体，研究了使用基于四乙氧基硅烷 (TEOS) 的等离子体的等离子体增强化学气相沉积的机制。对于实验测量，等离子体由 TEOS/惰性气体混合物生成，即 Ar/TEOS 或 He/TEOS。结果表明，与 Ar/TEOS 等离子体相比，He/TEOS 等离子体中产生的 TEOS 碎片（即硅络合物）数量更多。等离子体模拟表明，He/TEOS 等离子体比 Ar/TEOS 等离子体具有更高的电子温度，从而增强了电子撞击引起的离解反应。₂气体混合比增加。_{然而，O 2}流速进一步增加超过一定比例会导致信号数量减少。这归因于从 SiO 生成的气相反应到 SiO 从靠近入口的部分扩散的决定步骤的变化。我们还发现，Ar*、O ₂ * 和 O* 等亚稳态物质是原子氧 (O) 生成的主要贡献者，这与高沉积速率密切相关。