We have discussed the thermal sensing capability under a constant current level and current versus voltage (I–V) traces by measuring the temperature of high series resistance Pt/n-GaP/Al/Ti Schottky structures in the 100−320 K range. The R_s values of 35 Ω and 4.50 × 10³ kΩ for the device have been determined from I–V traces at 320 and 100 K, respectively. The thermal sensing (V–T) curves are expected to give a straight line at each current level. However, the V–T curves have deviated upward from linearity due to the high R_s value of the device after a certain temperature. The deviation point from linearity in V–T traces shifts to higher temperatures with an increase in bias voltage and current level. Thereby, the straight-line interval portion of the V–T curve has become too small with an increase in the current value. The thermal sensing coefficient α changed from 2.49 mV/K at 10 μA to 3.21 mV/K at 0.50 nA. Therefore, it has been concluded that the Pt/n-GaP/Al/Ti Schottky barrier (SB) is preferable for thermal sensor applications at the small current levels of 0.50, 1.0, 2.0, and 10.0 nA with high sensitivity up to a minimum temperature of 100 K. From I–V curves, $q{\mathrm{\Phi }}_{b_0}$ and ideality factor values have ranged from 1.200 eV and 1.066 at 320 K to 0.854 eV and 1.705 at 100 K. It has been reported in the literature that the large SB height leads to a better temperature response.

中文翻译：

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Pt/n-GaP/Al/Ti 肖特基二极管的热传感能力和电流-电压-温度特性

我们通过测量 100−320 K 范围内的高串联电阻 Pt/ n -GaP/Al/Ti 肖特基结构的温度，讨论了恒定电流水平和电流与电压 ( I–V ) 迹线下的热传感能力。器件的 35 Ω 和 4.50 × 10 ³ kΩ 的R _s值分别由 320 和 100 K 的 I-V 迹线确定 。热感应 ( V–T ) 曲线预计会在每个电流级别给出一条直线。然而，由于高R _{s ，} V-T曲线向上偏离线性一定温度后器件的值。随着偏置电压和电流水平的增加，V-T迹线中的线性偏差点会移至更高的温度。因此，随着电流值的增加，V-T曲线的直线区间部分变得太小。热传感系数α从 10  μ A 时的 2.49 mV/K 变为 0.50 nA 时的 3.21 mV/K。因此，可以得出结论，在 0.50、1.0、2.0 和 10.0 nA 的小电流水平下，Pt/ n -GaP/Al/Ti 肖特基势垒 (SB) 更适合热传感器应用，并且灵敏度最高可达最小值温度为 100 K。从I-V曲线，$q{\mathrm{\Phi }}_{b_0}$理想因子值的范围从 320 K 时的 1.200 eV 和 1.066 到 100 K 时的 0.854 eV 和 1.705。据文献报道，较大的 SB 高度会导致更好的温度响应。