Despite several attempts to enhance the electrical and charge carrier transport characteristics of porous silicon (PSi), the requisite conditions for optimally synthesizing n-PSi with appealing optoelectronic properties are yet to be achieved. Therefore, this research explores the effect of the chemical ratio of precursor materials (HF:C₂H₆O:H₂O₂) on the surface morphology, crystalline structure, and optical and electric properties of PSi. The PSi was produced by photoelectrochemical etching followed by anodization of the n-type Si under light illumination. The properties of the as-prepared PSi were studied by means of microscopic and spectroscopic techniques. The HF:C₂H₆O:H₂O₂ chemical ratio was optimized at 2 : 1 : 1. A metal–semiconductor–metal (MSM) ultraviolet photodetector (Pt/n-PSi/Pt) was fabricated, which exhibited high performances under UV light (365 nm) illumination. The photodetector was shown to be highly stable and reliable with a rapid rise time of 0.56 s at a bias voltage of +5 V. The MSM photodetector displayed responsivity (R_p) of 9.17 A/m at 365 nm, which significantly exceeds the values reported for TiC/porous Si/Si in some contemporary research. The photodetector fabricated from n-PSi, synthesized at an optimum chemical ratio (2 : 1 : 1) exhibited the best photodetection performance, possibly due to the high porosity and defect-free state of the n-PSi thin films.

中文翻译：

---

基于光电化学蚀刻的纳米多孔硅制备紫外光电探测器：蚀刻剂比例的影响

尽管多次尝试提高多孔硅 (PSi) 的电和电荷载流子传输特性，但尚未达到最佳合成具有吸引人的光电特性的 n-PSi 的必要条件。_{因此，本研究探讨了前驱体材料的化学配比（HF:C 2} H ₆ O:H ₂ O ₂）对PSi表面形貌、晶体结构和光电性能的影响。PSi 是通过光电化学蚀刻，然后在光照下对 n 型 Si 进行阳极氧化而制成的。通过显微和光谱技术研究了所制备的 PSi 的性质。HF:C ₂ H ₆ O:H₂ O ₂化学比优化为2 : 1 : 1。制作了金属-半导体-金属（MSM）紫外光电探测器（Pt/n-PSi/Pt），在紫外光（365 nm）照射下表现出高性能。该光电探测器显示出高度稳定和可靠，在 +5 V 的偏置电压下具有 0.56 秒的快速上升时间。MSM 光电探测器在 365 nm 处显示的响应度 (R p ) 为 9.17 A/m，这大大超过了_这些值在一些当代研究中报道了 TiC/多孔 Si/Si。由 n-PSi 制成的光电探测器以最佳化学比（2：1：1）合成，表现出最佳的光电探测性能，这可能是由于 n-PSi 薄膜的高孔隙率和无缺陷状态。