By powering sophisticated lithium-ion batteries (LIBs), silicon/carbon (Si/C) composites have the potential to accelerate the sustainable energy transition. This is a first-of-its-kind Si/C hybrid with hydroxyl-functionalized graphene quantum dots (OH-GQD) electrostatically assembled within interconnected reduced graphene oxide networks ([email protected]/rGO) prepared through solution-phase ultrasonication and subsequent one-step, low-temperature annealing and thermal reduction. The [email protected]/rGO hybrid utilized as the LIB anode delivered a high initial specific capacity of 2,229.16, 1,303.21, and 1,090.13 mAh g⁻¹ reversible capacities at 100 mA g⁻¹ after 50 and 100 cycles, and recovered 1,473.28 mAh g⁻¹ at rates as high as 5 A g⁻¹. The synergistic benefits of the OH-GQD/rGO interface give dual, conductive carbon protection to silicon nanoparticles. Consecutive Si surface modifications improved Si–rGO contact modes. The initial OH-GQD carbon coating increased storage capacity through vacancy defects changing the electron density in the lattice, whereas hydroxyl functionality at the edges acted as active storage sites. Secondary protection through rGO encapsulation improved Si conductivity and usage by providing continuous electron/ion routes while minimizing Si volume variations. The proposed OH-GQD/rGO hybridization as a dual-carbon protection strategy to Si stabilized the solid electrolyte interface leading to electrode stability. This work is expected to advance the development of next-generation Si-based LIB anodes.

中文翻译：

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用于高级锂离子电池的羟基功能化石墨烯量子点包覆硅纳米粒子/还原石墨烯混合阳极的特性和电化学性能

通过为复杂的锂离子电池 (LIB) 提供动力，硅/碳 (Si/C) 复合材料具有加速可持续能源转型的潜力。这是首创的 Si/C 杂化物，具有羟基功能化的石墨烯量子点 (OH-GQD)，通过溶液相超声波处理和随后的制备，静电组装在相互连接的还原氧化石墨烯网络 ([电子邮件保护]/rGO) 中一步，低温退火和热还原。用作 LIB 负极的 [email protected]/rGO 杂化物在 50 和 100 次循环后在 100 mA g ^{-1下提供了 2,229.16、1,303.21 和 1,090.13 mAh g -1}的高初始比容量，并恢复了 1,473.28 mAh g ^{- 1}速率高达 5 A g ⁻¹. OH-GQD/rGO 界面的协同优势为硅纳米粒子提供双重导电碳保护。连续的 Si 表面改性改进了 Si-rGO 接触模式。最初的 OH-GQD 碳涂层通过空位缺陷改变晶格中的电子密度来增加存储容量，而边缘的羟基功能充当活性存储位点。通过 rGO 封装的二级保护通过提供连续的电子/离子路径同时最大限度地减少 Si 体积变化来提高 Si 的导电性和使用率。所提出的 OH-GQD/rGO 杂化作为 Si 的双碳保护策略稳定了固体电解质界面，从而导致电极稳定性。这项工作有望推动下一代硅基锂离子电池负极的发展。