A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV / cm, and the Auger coefficient decreased down to 2.1 × 10 − 31 and 0.6 × 10 − 31 cm6 s − 1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.

中文翻译：

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静水压力对InGaN/GaN多量子阱激光二极管俄歇系数的影响

使用数值模型分析静水压力下 c 面 InGaN/GaN 多量子阱激光二极管 (MQWLD) 中的俄歇系数。采用有限差分技术获取 InGaN/GaN MQWLD 的能量特征值及其相应的特征函数，并在施加静水压力下通过 6 × 6 kp 方法计算空穴本征态。结果发现，高达 10 GPa 的压力变化会增加量子阱和势垒中的载流子密度以及有效带隙。根据结果​​，在 MQW 和势垒中，束缚能降低，电场速率增加至 0.77 MV / cm，俄歇系数降低至 2.1 × 10 − 31 和 0.6 × 10 − 31 cm6 s − 1地区，分别。还，计算表明，空穴-空穴-电子（CHHS）和电子-电子-空穴（CCCH）俄歇系数对俄歇系数的贡献最大。我们的研究对基于 InGaN 的发光二极管在静水压力下俄歇复合率下降的起源提供了更详细的见解。