The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr_0.52Ti_0.48O₃ (PZT) electrolyte, which can sustain both neuron and synaptic behavior depending on the identity of the active electrode. The Ag/PZT/La_0.8Sr_0.2MnO₃ (LSMO) threshold switching memristor shows abrupt and volatile resistive switching characteristics, which lead to neuron devices with stochastic integration-and-fire behavior, auto-recovery, and rapid operation. In contrast, the Ni/PZT/LSMO memory switching memristor exhibits gradual, non-volatile resistive switching behavior, which leads to synaptic devices with a high on/off ratio, low on-state current, low variability, and spike-timing-dependent plasticity (STDP). The divergent behavior of the ECM devices is attributed to greater control of cation migration through the ultrathin ferroelectric PZT. Thus, ECM devices with an identical ferroelectric electrolyte offer promise as essential building blocks in the construction of high-performance neuromorphic computing systems.

由于它们不同的电阻开关特性，尚未实现在基于电化学金属化 (ECM) 的神经元和突触设备中使用相同的电解质。在此，我们描述了包含相同铁电 PbZr _0.52 Ti _0.48 O ₃ (PZT) 电解质的 ECM 设备，它可以根据活性电极的特性维持神经元和突触行为。Ag/PZT/La _0.8 Sr _0.2 MnO ₃(LSMO) 阈值开关忆阻器显示出突然和易变的电阻开关特性，这导致神经元器件具有随机积分和点火行为、自动恢复和快速操作。相比之下，Ni/PZT/LSMO 存储器开关忆阻器表现出渐进的、非易失性电阻开关行为，这导致突触器件具有高开/关比、低导通电流、低可变性和尖峰时间依赖性可塑性（STDP）。ECM 器件的不同行为归因于通过超薄铁电 PZT 更好地控制阳离子迁移。因此，具有相同铁电电解质的 ECM 设备有望成为构建高性能神经形态计算系统的基本构件。