This paper presents the effect of dielectric materials i.e., hafnium dioxide (HfO₂, high-$k)$ and silicon dioxide (SiO₂, low-$k)$, as gate-oxide material for the nonaligned double gate junction $n$-channel field effect transistor (NADG-NFET). The NADGNFET device proposed in this work lowers the second order effects and improves the transistor linear performance at radio frequency. The device response with gate-oxide material is investigated by using two dielectric materials on the obtained current–voltage characteristics, intrinsic gain, and linearity parameter. The device simulations were done using a 2D-sentaurus TCAD tool. The results were examined in terms of DIBL (drain-induced barrier lowering), SS (subthreshold swing), $I_{\mathrm{\text{ON}}}$ current, $I_{\mathrm{\text{ON}}}/I_{\mathrm{\text{OFF}}}$ ratio, the Intrinsic gain ($A_{\mathrm{\text{VO}}})$, and intermodulation distortion power-3 (IMD3) parameter. It has been found that high-$k$ dielectric decreases the DIBL by 40%, improves the $I_{\mathrm{\text{ON}}}/I_{\mathrm{\text{OFF}}}$ ratio by 8 times, and also improves the intrinsic gain by 38% compared to low-$k$ dielectric material. However, the high frequency parameter result was better with low-$k$ dielectric material. This gives a trade-off in the device applications. The IMD3 plot shows that using the two gate-oxide material will give the same performance to the radio frequency (RF) signal.

本文介绍了介电材料的影响，即二氧化铪 (HfO ₂，​​高$k）$和二氧化硅（SiO ₂，​​低$k）$，作为非对准双栅极结的栅极氧化物材料$n$-沟道场效应晶体管（NADG-NFET）。这项工作中提出的 NADGNFET 器件降低了二阶效应并提高了晶体管在射频下的线性性能。通过使用两种介电材料对所获得的电流-电压特性、固有增益和线性参数研究了栅极氧化物材料的器件响应。设备模拟是使用 2D-sentaurus TCAD 工具完成的。结果根据 DIBL（漏极诱导势垒降低）、SS（阈下摆幅）、${我}_{\mathrm{\text{在}}}$当前的，${我}_{\mathrm{\text{在}}}/{我}_{\mathrm{\text{离开}}}$比率，固有增益（$A_{\mathrm{\text{视氧浓度}}}）$，以及互调失真功率 3 (IMD3) 参数。研究发现，高$k$电介质使 DIBL 降低 40%，提高了${我}_{\mathrm{\text{在}}}/{我}_{\mathrm{\text{离开}}}$比率提高了8倍，并且与低功耗相比，固有增益也提高了38%$k$介电材料。然而，低频参数结果更好$k$介电材料。这在设备应用中给出了权衡。IMD3 图显示，使用两种栅极氧化物材料将为射频 (RF) 信号提供相同的性能。