Detailed optoelectronic simulations of thin-film photovoltaic solar cells (PVSCs) with a homogeneous photon-absorber layer made of with CIGS or CZTSSe were carried out to determine the effects of defect density, minority carrier lifetime, doping density, composition (i.e., bandgap energy), and absorber-layer thickness on solar-cell performance. The transfer-matrix method was used to calculate the electron-hole-pair (EHP) generation rate, and a one-dimensional drift-diffusion model was used to determine the EHP recombination rate, open-circuit voltage, short-circuit current density, power-conversion efficiency, and fill factor. Through a comparison of limited experimental data and simulation results, we formulated expressions for the defect density in terms of the composition parameter of either CIGS or CZTSSe. All performance parameters of the thin-films PVSCs were thereby shown to be obtainable from the bulk material-response parameters of the semiconductor, with the influence of surface defects being small enough to be ignored. Furthermore, unrealistic values of the defect density (equivalently, minority carrier lifetime) will deliver unreliable predictions of the solar-cell performance. The derived expressions should guide fellow researchers in simulating the graded-bandgap and quantum-well-based PVSCs.

中文翻译：

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CIGS 和 CZTSSe 薄膜太阳能电池中缺陷密度、少数载流子寿命、掺杂密度和吸收层厚度的影响

对具有由 CIGS 或 CZTSSe 制成的均匀光子吸收层的薄膜光伏太阳能电池 (PVSC) 进行了详细的光电模拟，以确定缺陷密度、少数载流子寿命、掺杂密度、成分（即带隙能量）的影响), 以及吸收层厚度对太阳能电池性能的影响。转移矩阵法用于计算电子空穴对（EHP）产生率，一维漂移扩散模型用于确定EHP复合率，开路电压，短路电流密度，功率转换效率和填充因子。通过比较有限的实验数据和模拟结果，我们根据 CIGS 或 CZTSSe 的成分参数制定了缺陷密度的表达式。由此表明，薄膜 PVSC 的所有性能参数都可以从半导体的体材料响应参数中获得，表面缺陷的影响小到可以忽略不计。此外，不切实际的缺陷密度值（相当于少数载流子寿命）将对太阳能电池性能做出不可靠的预测。派生的表达式应该指导其他研究人员模拟渐变带隙和基于量子阱的 PVSC。