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Investigation of the tribochemical reaction mechanism in dry-type CMP of 6H-SiC substrate
Surface Engineering ( IF 2.8 ) Pub Date : 2023-07-03 , DOI: 10.1080/02670844.2023.2223452
Zongtang Li 1 , Zhichao Qi 1 , Tianyi Zhang 1 , Zhankui Wang 1 , Jianxiu Su 1
Affiliation  

ABSTRACT

In this paper, the tribochemical reaction mechanism between solid powder and 6H-SiC substrate was investigated. White light interferometer was used to detect surface roughness, FESEM was used to observe surface characteristics, EDS was used to detect surface elements and XRD was used to detect surface components. The tribochemical reaction mechanism of the reduced iron powder, anhydrous sodium carbonate and deionized water with 6H-SiC was analysed by the detection results. It is found that the reduced iron powder, anhydrous sodium carbonate and deionized water react with the 6H-SiC surface to form a soft interfacial transition layer which can be removed. The removal rate of the reduced iron powder is the highest at 191 nm h–1. The surface quality decreases after polishing with the anhydrous sodium carbonate. The results of this study provide a new idea for the field of ultra-precision machining.



中文翻译:

6H-SiC基体干式CMP摩擦化学反应机理研究

摘要

本文研究了固体粉末与6H-SiC基体之间的摩擦化学反应机理。采用白光干涉仪检测表面粗糙度,采用FESEM观察表面特征,采用EDS检测表面元素,采用XRD检测表面成分。通过检测结果分析了还原铁粉、无水碳酸钠和去离子水与6H-SiC的摩擦化学反应机理。结果发现,还原铁粉、无水碳酸钠和去离子水与6H-SiC表面反应,形成可去除的软界面过渡层。还原铁粉去除率在191 nm h –1处最高。用无水碳酸钠抛光后表面质量下降。该研究成果为超精密加工领域提供了新思路。

更新日期:2023-07-07
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