Self-heating effects and short channel effects are unappealing side effects of multigate devices like gate-all-around nanowire-field-effect transistors (FETs) and fin FETs, limiting their performance and posing reliability difficulties. This paper proposes the use of the novel nanosheet FET (NsFET) for complementary metal-oxide semiconductor technology nodes that are changing. Design guidelines and basic measurements for the sub-nm node are displayed alongside a brief introduction to the roadmap to the sub-nm regime and electronic market. The device had an I_ON/I_OFF ratio of more than 10⁵, according to the proposed silicon-based NsFET. For low-power and high-switching applications, the results were verified and achieved quite well. When an NS width increases, although, the threshold voltage (V_th) tends to fall, resulting in a loss in subthreshold effectiveness. Furthermore, the proposed device performance, like subthreshold swing I_ON/I_OFF, was studied with a conventional 2D FET. Hence, the proposed NsFET can be a frontrunner for ultra-low power and high-speed switching applications.

中文翻译：

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用于高速开关应用的纳米片场效应晶体管的设计和分析

自热效应和短沟道效应是环栅纳米线场效应晶体管 (FET) 和鳍式 FET 等多栅极器件令人讨厌的副作用，限制了它们的性能并造成可靠性困难。本文提出将新型纳米片 FET (NsFET) 用于正在变化的互补金属氧化物半导体技术节点。展示了亚纳米节点的设计指南和基本测量，同时还简要介绍了亚纳米体系和电子市场的路线图。该器件的I _ON / I _OFF比率超过 10 ⁵，根据所提出的硅基 NsFET。对于低功耗和高开关应用，结果得到了验证并取得了相当好的效果。然而，当 NS 宽度增加时，阈值电压（V _th）趋于下降，导致亚阈值有效性的损失。此外，还使用传统的 2D FET 研究了所提出的器件性能，例如亚阈值摆幅I _ON / I _{OFF 。}因此，所提出的 NsFET 可以成为超低功耗和高速开关应用的领跑者。