The nanocomposite, poly(3-hexylthiophene-2,5-diyl) (P3HT)–graphene/molybdenum disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method with different numbers of laser pulses deposited onto a porous silicon (PSi) substrate using the drop-casting technique. Nanocrystalline PSi films are prepared by electrochemical etching of a P-type silicon wafer. The optical properties, transmission electron microscope (TEM), and photodetector properties were studied. Optical measurements confirmed that the energy gap decreases from 2.03 to 1.87 eV with the increasing number of laser pulses for graphene and MoS2. This decrease in the energy gap was attributed to the increase in graphene and its combination with molybdenum. Due to the higher electrical conductivity of the hybrid material, the MoS2 leads to reduce the band gap. From the TEM images, it was found that the average size of the particles was between 3.1 and 20.8 nm depending on increasing the number of laser pulses for both graphene and MoS2 with hemispherical particle shapes. The Ag / PSi / P3HT − G / MoS2 / Ag photodetector was fabricated for all samples prepared to characterize the effect of laser pulses number for graphene and MoS2 on the photodetector performance. The maximum value of the specific response, specific detection, and quantum efficiency was 0.35 A / W, 5.1 × 1012 cm Hz1/2 W − 1, and 49.2% at 900 nm due to the absorption edge of silicon around 0.23 A / W, 3.3 × 1012 cm Hz1/2 W − 1, and 38.9% at 760 nm due to the absorption edge of P3HT − G / MoS2 NPS. The results indicate that the PLA method successfully fabricated the P3HT − G / MoS2 nanocomposites and that the resulting product exhibited high values in responsivity, detectivity, and quantum efficiency. Additionally, it appears that the nanocomposites may have enhanced the same parameters of the PSi photodetector.

中文翻译：

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光电探测器应用中 P3HT − G/MoS2 纳米复合材料薄膜的合成和表征

聚（3-己基噻吩-2,5-二基）（P3HT）-石墨烯/二硫化钼（MoS2）纳米复合材料首次通过脉冲激光烧蚀（PLA）方法制备，将不同数量的激光脉冲沉积在使用滴铸技术的多孔硅（PSi）基板。纳米晶 PSi 薄膜是通过 P 型硅片的电化学蚀刻制备的。研究了光学特性、透射电子显微镜（TEM）和光电探测器特性。光学测量证实，随着石墨烯和二硫化钼激光脉冲数量的增加，能隙从 2.03 eV 减小到 1.87 eV。能隙的减小归因于石墨烯及其与钼的结合的增加。由于杂化材料具有较高的电导率，MoS2导致带隙减小。从 TEM 图像中发现，对于半球形颗粒形状的石墨烯和 MoS2，颗粒的平均尺寸在 3.1 至 20.8 nm 之间，具体取决于激光脉冲数量的增加。为表征石墨烯和 MoS2 的激光脉冲数对光电探测器性能的影响而制备的所有样品都制作了 Ag / PSi / P3HT – G / MoS2 / Ag 光电探测器。由于硅的吸收限约为 0.23 A/W，特异性响应、特异性检测和量子效率的最大值为 0.35 A/W、5.1 × 1012 cm Hz1/2 W − 1，在 900 nm 处为 49.2%， 3.3 × 1012 cm Hz1/2 W − 1，由于 P3HT − G / MoS2 NPS 的吸收边，在 760 nm 处为 38.9%。结果表明，PLA方法成功制备了P3HT-G/MoS2纳米复合材料，所得产品在响应率、探测率和量子效率方面表现出较高的值。此外，纳米复合材料似乎可以增强 PSi 光电探测器的相同参数。