当前位置: X-MOL 学术Electron. Commun. Jpn. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Characterization of the VO2 thin films grown on glass substrates by MOD
Electronics and Communications in Japan ( IF 0.3 ) Pub Date : 2023-08-16 , DOI: 10.1002/ecj.12403
Hideo Wada 1 , Taito Fukawa 1 , Kazuaki Toyota 1 , Masatoshi Koyama 1 , Nobuya Hiroshiba 1 , Kazuto Koike 1
Affiliation  

This paper describes the deposition of Nb doped vanadium dioxide (VO2) films on a glass substrate by metal organic decomposition (MOD) and their thermochromic properties. The difference in thermochromic properties of VO2 thin films on a glass substrate was investigated with and without a buffer layer of Hf0.5Zr0.5O2 (HZO). The phase transition temperature of VO2 thin film successfully reduced from 83°C to 43°C on a glass substrate with a buffer layer of HZO. Without a buffer layer of HZO, the thermochromic properties of VO2 thin films deteriorated comparing with a buffer layer of HZO. HZO buffer layer effectively suppresses the miniaturization of VO2 crystallite size of thin film due to Nb doping. Moreover, it would block out the diffusion of Al, Na, and Ca impurity ions from a glass substrate and the partial oxidation of VO2 thin films judging from XPS O1s spectra and XPS depth profile analysis. We conclude that the insertion of the HZO buffer layer is a useful technique for controlling the transition temperature of VO2 for the smart window applications by MOD.

中文翻译:

MOD 表征玻璃基板上生长的 VO2 薄膜

本文描述了通过金属有机分解(MOD)在玻璃基板上沉积铌掺杂二氧化钒(VO 2 )薄膜及其热致变色性能。研究了玻璃基板上有和没有Hf0.5Zr0.5O2 (HZO) 缓冲层的VO 2薄膜热致变色性能的差异。在具有HZO缓冲层的玻璃基板上, VO 2薄膜的相变温度成功地从83℃降低到43℃。没有HZO缓冲层时,与HZO缓冲层相比,VO 2薄膜的热致变色性能恶化。HZO缓冲层有效抑制VO 2的小型化由于 Nb 掺杂而导致的薄膜微晶尺寸。此外,从XPS O1s光谱和XPS深度剖面分析来看,它会阻止Al、Na和Ca杂质离子从玻璃基板的扩散以及VO 2薄膜的部分氧化。我们得出结论,HZO 缓冲层的插入是通过 MOD 控制智能窗应用的VO 2转变温度的有用技术。
更新日期:2023-08-16
down
wechat
bug