Thin films of polycrystalline silicon are widely used in semiconductor industry. One of the methods for obtaining such structures on cheap and low-melting substrates is metal-induced crystallization, since the use of a metal (for example, Au) as a catalyst during crystallization of an amorphous semiconductor allows a considerable reduction of annealing temperature. However, the typical duration of metal-induced crystallization is several tens of hours, in contrast to the method of laser-induced crystallization. In the present work, we for the first time propose to combine the advantages of the laser-induced and Au-induced crystallization methods. We have identified laser-processing modes of thin films of non-stoichiometric silicon oxide (a-SiO_0.1) using nanosecond radiation with a wavelength in the infrared range which ensure the formation of polycrystalline silicon.

多晶硅薄膜广泛应用于半导体工业。在廉价且低熔点的衬底上获得这种结构的方法之一是金属诱导结晶，因为在非晶半导体结晶期间使用金属（例如Au）作为催化剂可以显着降低退火温度。然而，与激光诱导晶化方法相比，金属诱导晶化的典型持续时间为数十小时。在目前的工作中，我们首次提出结合激光诱导和金诱导结晶方法的优点。我们已经确定了非化学计量氧化硅 (a-SiO _0.1）使用波长在红外范围内的纳秒辐射，确保多晶硅的形成。