ZSSG (ZnSSe/rGO) composites are prepared by a hydrothermal method. The structure, morphology and material properties are investigated by various tests. Compared to ZnSe, the diffraction peaks of ZnSSe are moved to a larger angle and located between cubic phase ZnSe and cubic phase ZnS. The photocurrent density of ZSSG20 with 20 wt.% graphene is 2.17×10⁻⁵ A cm⁻², which is 8.9 times higher than that of pure ZnSSe. ZSSG20 has the minimum charge transfer resistance and highest carrier density. The decreased fluorescence intensity in PL spectra indicates that graphene can effectively prevent the recombination of electron-hole pairs.

中文翻译：

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ZnSSe 修饰的还原氧化石墨烯可增强光电性能

ZSSG（ZnSSe/rGO）复合材料是通过水热法制备的。通过各种测试研究结构、形貌和材料性能。与ZnSe相比，ZnSSe的衍射峰移动到更大的角度，并且位于立方相ZnSe和立方相ZnS之间。含有20wt.%石墨烯的ZSSG20的光电流密度为2.17×10 ^-5  A cm ^-2，是纯ZnSSe的8.9倍。ZSSG20具有最小的电荷转移电阻和最高的载流子密度。PL光谱中荧光强度的降低表明石墨烯可以有效阻止电子-空穴对的复合。