This work presents a highly sensitive hybrid-integrated optical receiver with a custom designed linear transimpedance amplifier (TIA). The choice of the circuit and diode technology, considering the impact of process parameters on the optical sensitivity and the input referred noise current, are elaborated. The TIA has been designed in a 55-nm complementary metal oxide semiconductor process and was combined with a commercial InGaAs/InP PIN-diode. Measurements resulted in a transimpedance of 9.2 kΩ and a bandwidth of 1.4 GHz. The optical sensitivity of the hybrid receiver is −27.45 dBm for 2 Gbps, with a wavelength of 1550 nm and a bit error rate of 10 − 9. The input referred root mean square (RMS) noise current results in 110 nA. The fabricated chip has an area of 410 μm × 410 μm and a power consumption of 31 mW at a 1 V supply voltage. The performance of the designed TIA is able to match other designs used in high sensitivity applications such as continuous variable quantum key distribution or optical wireless communication, while consuming significantly less power and having a smaller chip area.

中文翻译：

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高灵敏度混合光接收器，采用 55 nm CMOS 封装，具有紧凑型 1.4 GHz 线性跨阻放大器

这项工作提出了一种具有定制设计的线性跨阻放大器 (TIA) 的高灵敏度混合集成光接收器。详细阐述了电路和二极管技术的选择，考虑了工艺参数对光学灵敏度和输入参考噪声电流的影响。TIA 采用 55 nm 互补金属氧化物半导体工艺设计，并与商用 InGaAs/InP PIN 二极管相结合。测量结果为 9.2 kΩ 的跨阻抗和 1.4 GHz 的带宽。混合接收器的光学灵敏度为 -27.45 dBm (2 Gbps)，波长为 1550 nm，误码率为 10 - 9。输入参考均方根 (RMS) 噪声电流结果为 110 nA。所制作的芯片面积为410μm×410μm，电源电压为1V时功耗为31mW。