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Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth”
IEEE Journal of Quantum Electronics ( IF 2.5 ) Pub Date : 2023-08-02 , DOI: 10.1109/jqe.2023.3301017 Yage Liu 1 , Yingjie Ma 1 , Xue Li 1 , Yi Gu 1 , Yonggang Zhang 1 , Haimei Gong 1 , Jiaxiong Fang 1
IEEE Journal of Quantum Electronics ( IF 2.5 ) Pub Date : 2023-08-02 , DOI: 10.1109/jqe.2023.3301017 Yage Liu 1 , Yingjie Ma 1 , Xue Li 1 , Yi Gu 1 , Yonggang Zhang 1 , Haimei Gong 1 , Jiaxiong Fang 1
Affiliation
In the above article [1]
, the affiliations were written as: The authors are with the State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China (e-mail: mayingjie@mail.sitp.ac.cn; lixue@mail.sitp.ac.cn).
更新日期：2023-08-02
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