We investigate the surface/subsurface bonding, retention, and thermal stability of nitrogen in H-Diamond (100) implanted with 200 eV N₂⁺ at a dose of 1×10¹⁴ ions/cm² (D1) in comparison to a dose of 3-4×10¹⁴ ions/cm² (D2) and to nitrogen adsorbed on the surface (by MW(N₂) exposure) by electron spectroscopy. For D1, the N(1s) XP line displays a single symmetric peak associated with C‒N/C=N species, concurrently observing a minor C=C/C(def) component in C(1s). The N(1s) line intensity decreases linearly with annealing temperature without changes in line shape. This could be due to competition of diffusion of trapped nitrogen from interstitial positions followed by desorption and recombination of the implanted nitrogen with carbon vacancies, resulting in very thermally stable nitrogen species. The latter process is dominant at ∼700 °C where the onset of vacancies diffusion in diamond occurs. For D2, an additional component associated with CN(nitrile-like) bonds is observed. From vibrational spectroscopy, the H-Diamond surface implanted with a D1 dose displays features associated with nitrogen bonding to carbon atoms and hydrogen bonding to the diamond surface and defects. Unlike the MW(N₂) plasma case, no NH_x(ads) bonds are identified upon implantation. High-temperature annealing shows that for the D1 dose, partial surface structural recovery occurs.

我们研究了以 1×10 ¹⁴离子/cm ² (D1)剂量注入 200 eV N ₂ ⁺的 H-金刚石 (100) 中氮的表面/次表面键合、保留和热稳定性，并与3-4×10 ¹⁴ ions/cm ² (D2) 和吸附在表面的氮（通过MW(N ₂）曝光）通过电子能谱。对于 D1，N(1s) XP 线显示与 C−N/C=N 物质相关的单个对称峰，同时观察到 C(1s) 中的次要 C=C/C(def) 分量。N(1s)谱线强度随退火温度线性降低，谱线形状不发生变化。这可能是由于捕获的氮从间隙位置扩散的竞争，随后注入的氮与碳空位的解吸和重组，从而产生非常热稳定的氮物质。后一个过程在〜700°C 时占主导地位，此时金刚石中开始发生空位扩散。对于 D2，与 C 相关的附加组件观察到N（腈类）键。根据振动光谱，注入 D1 剂量的 H 金刚石表面显示出与碳原子的氮键合以及与金刚石表面和缺陷的氢键合相关的特征。与MW(N ₂ )等离子体情况不同，在注入时没有识别出NH _x (ads)键。高温退火表明，对于D1剂量，出现了部分表面结构恢复。