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High consistency VO2 memristor for artificial auditory neuron
Microelectronic Engineering ( IF 2.3 ) Pub Date : 2023-09-27 , DOI: 10.1016/j.mee.2023.112101
Yan Wang , Chaohui Su , Yiming Zheng , Kexin Zhou , Zhenli Wen , Yujun Fu , Qi Wang , Deyan He

With scalability and diverse device behavior, memristors present potential for executing neuromorphic computation with lower hardware cost and power consumption. However, Low consistency currently limited the application of memristors. Herein, we report a VO2-based memristor fabricated through magnetron sputtering and multiple annealing processes, exhibiting extremely low in both cycle-to-cycle (C2C) and device-to-device (D2D) variations. Further, a Hodgkin-Huxley model neuron circuit based on the extremely high consistency of the devices is established, which achieves auditory neuron perception simulation through spatiotemporal processing of spike signals, allowing for clear differentiation of sound source direction and displaying patterns akin to biological behavior. This easily implemented and highly consistent artificial neuron offers a promising approach for the development of next-generation artificial auditory systems.



中文翻译:

用于人工听觉神经元的高一致性 VO2 忆阻器

忆阻器具有可扩展性和多样化的设备行为,具有以较低的硬件成本和功耗执行神经形态计算的潜力。然而,一致性差目前限制了忆阻器的应用。在此,我们报告 VO 2基于忆阻器,通过磁控溅射和多次退火工艺制造,在周期间(C2C)和器件间(D2D)变化方面表现出极低的变化。进一步,建立了基于器件极高一致性的Hodgkin-Huxley模型神经元电路,通过尖峰信号的时空处理实现听觉神经元感知模拟,从而能够清晰区分声源方向并显示类似于生物行为的模式。这种易于实现且高度一致的人工神经元为下一代人工听觉系统的开发提供了一种有前途的方法。

更新日期:2023-09-27
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