—In this paper, we proposed a SOI FinFET based ON bipolar cell of silicon retina which plays an important role in neuromorphic applications like differential motion detection. Low power consumption along with biological plausibility is one of the crucial parameters of any neuromorphic retinal circuit as in the brain all biological systems consisting of billions of neurons consume power in terms of a few μwatts. First, the output of linkage cell between inner and outer plexiform layer i.e. bipolar cell is reconstructed and verified using developed ionic current based mathematical model which is established considering Hodgkin-Huxley model as the base model, and then biological behavior of the ON bipolar cell is mimicked through circuit using 180 nm, 90 nm and 45 nm Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The power consumption in each case is obtained to be approximately 18.5 nW, 10.5 nW and 1 nW which is much larger than the power consumed by biological bipolar cell. Moreover, the same circuit is implemented with 32 nm Silicon on Insulator Fin Field Effect Transistor (SOI FinFET) device. It is observed that SOI FinFET based ON bipolar cell consumes 17.5 pW power which is less in comparison to MOSFET based bipolar cell. The output of bipolar cell is matched with biological nature of the waveform in each case.

—在本文中，我们提出了一种基于硅视网膜双极单元的 SOI FinFET，它在差分运动检测等神经形态应用中发挥着重要作用。低功耗和生物学合理性是任何神经形态视网膜电路的关键参数之一，因为在大脑中，由数十亿个神经元组成的所有生物系统的功耗均为几微瓦。首先，使用以Hodgkin-Huxley模型为基础模型建立的基于离子电流的数学模型来重建和验证内丛状层和外丛状层之间的连接细胞（即双极细胞）的输出，然后将ON双极细胞的生物学行为表示为通过使用 180 nm、90 nm 和 45 nm 金属氧化物半导体场效应晶体管 (MOSFET) 的电路进行模拟。每种情况下的功耗约为18.5 nW、10.5 nW和1 nW，远大于生物双极电池消耗的功耗。此外，相同的电路采用 32 nm 绝缘体上硅鳍式场效应晶体管 (SOI FinFET) 器件实现。据观察，基于 SOI FinFET 的 ON 双极电池消耗 17.5 pW 功率，与基于 MOSFET 的双极电池相比更低。双极电池的输出与每种情况下波形的生物性质相匹配。5 pW 功率，与基于 MOSFET 的双极电池相比更低。双极电池的输出与每种情况下波形的生物性质相匹配。5 pW 功率，与基于 MOSFET 的双极电池相比更低。双极电池的输出与每种情况下波形的生物性质相匹配。