Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of ~230 Ω⁻¹cm⁻¹ originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for the development of controllability of responses in AF materials.

即使在零磁场下，特定的反铁磁（AF）自旋配置也会通过动量空间中的非零贝里曲率产生巨大的反常霍尔效应（AHE）。除了对 AF 结构的限制之外，对 AF 域的适当控制对于观察这种效应而不使其域之间相互抵消至关重要；因此，兼容材料仍然有限。在这里，我们展示了一种正交非共线 AF 材料 NbMnP，获得了基于 AF 结构的 AHE 和 AF 域的可控性。^{理论计算表明，~230 Ω -1} cm ^-1的大霍尔电导率源自 NbMnP 的 AF 结构。对称性考虑因素解释了小净磁化强度的产生，其各向异性使得能够使用不同方向的磁场产生和消除霍尔响应。最后，NbMnP 中的不对称磁滞显示出开发 AF 材料响应可控性的潜力。