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High-Power III–V/Si Integrated Wavelength Tunable Laser for L-Band Applications
IEEE Journal of Quantum Electronics ( IF 2.5 ) Pub Date : 2023-09-25 , DOI: 10.1109/jqe.2023.3318589
Changpeng Li 1 , Shaoshuai Sui 2 , Feng Gao 1 , Yiming Wang 1 , Xiao Xu 1 , Jia Zhao 1
Affiliation  

We demonstrate a III-V/Si widely wavelength tunable laser covering the entire L-band for the optical communication systems. By carefully designing the silicon ring filter, low threshold current and high output power are expected. Using the standard silicon photonic process, the silicon filter chip is fabricated and compactly packaged with a reflective semiconductor optical amplifier. The low threshold current of 20 mA is achieved at 15 °C, and over 76 mW output power is obtained at 320 mA. The wavelength tuning range from 1565 nm to 1635 nm is realized with the side-mode suppression ratio larger than 50 dB. Furthermore, the intrinsic linewidth narrower than 25 kHz and relative intensity noise below −152 dB/Hz is achieved, which can support the coherent communications.

中文翻译:

适用于 L 波段应用的高功率 III-V/Si 集成波长可调谐激光器

我们展示了用于光通信系统的覆盖整个 L 波段的 III-V/Si 宽波长可调谐激光器。通过精心设计硅环滤波器,可以实现低阈值电流和高输出功率。采用标准硅光子工艺,制造硅滤波器芯片并与反射式半导体光放大器进行紧凑封装。在 15 °C 时可实现 20 mA 的低阈值电流,在 320 mA 时可获得超过 76 mW 的输出功率。实现了1565 nm至1635 nm的波长调谐范围,边模抑制比大于50 dB。此外,还实现了小于25 kHz的固有线宽和低于-152 dB/Hz的相对强度噪声,这可以支持相干通信。
更新日期:2023-09-25
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