The dependences of the real and imaginary parts of complex permittivity in AlN–SiC composites, with a silicon carbide content ranging from 20 to 50%, are characterized over a frequency range of 1–100 GHz. The SiC particles have average sizes of 0.8 and 2.3 μm. As the frequency increases from 1 to 100 GHz, the general trend shows a consistent decrease in the real part ε′ in inverse proportion to the frequency raised to the 1/5 power. The imaginary part ε″ first increases in direct proportion to the frequency raised to the 1/2 power when the frequency raises from 1 to 3 GHz, reaches its maximum in the 6–8 GHz range, and then monotonically decreases in inverse proportion to the frequency raised to the 1/5 power at frequencies greater than 8 GHz. Throughout the entire frequency range, ε′ and ε″ are found to be frequency-dependent. However, at frequencies above 8 GHz, the ε″ / ε′ = tgδ ratio remains constant and is not frequency-dependent. Analytical expressions are proposed for these dependences, allowing ε′ and ε″ to be calculated at any frequency within this range. To plot these dependencies, at least one experimental data point with reliable ε′ and ε″ values should be obtained, preferably between 2 and 5 GHz. This is particularly important for ε″, as it changes uniquely over the 1–10 GHz frequency range. To specify ε″ values at frequencies below 8 GHz, two methods are proposed. The first method employs geometric construction of the inscribed circle for ε″ as a function of frequency, enabling rapid determination of ε″ in the 4–8 GHz frequency range for AlN–SiC composites containing 20 to 50% SiC. The maximum deviation from true ε″ does not exceed 3%. The second method involves calculated parabolas, also inscribed in the frequency dependence of ε″. Over the 6–8 GHz range, the deviation of ε″ does not exceed 3% for SiC contents below 40%.

碳化硅含量为 20% 至 50% 的 AlN-SiC 复合材料中复介电常数实部和虚部的依赖性在 1-100 GHz 频率范围内进行表征。SiC颗粒的平均尺寸为0.8和2.3μm。随着频率从 1 GHz 增加到 100 GHz，总体趋势显示实部 ε' 与频率提高到 1/5 次方成反比，持续减小。当频率从 1 GHz 升高到 3 GHz 时，虚部 ε" 首先与频率的 1/2 次方成正比增大，在 6 GHz 到 8 GHz 范围内达到最大值，然后与频率成反比单调减小。在频率大于 8 GHz 时，频率提升至 1/5 次方。在整个频率范围内，发现 ε' 和 ε'' 与频率相关。然而，在高于 8 GHz 的频率下，ε″ / ε′ = tgδ 比率保持恒定并且与频率无关。针对这些相关性提出了解析表达式，允许在此范围内的任何频率下计算 ε' 和 ε''。为了绘制这些依赖性，至少应该获得一个具有可靠 ε' 和 ε'' 值的实验数据点，最好在 2 到 5 GHz 之间。这对于 ε'' 来说尤其重要，因为它在 1-10 GHz 频率范围内发生独特的变化。为了指定 8 GHz 以下频率下的 ε" 值，提出了两种方法。第一种方法采用 ε" 内切圆的几何构造作为频率的函数，能够在 4-8 GHz 频率范围内快速确定含有 20% 至 50% SiC 的 AlN-SiC 复合材料的 ε"。与真实ε″的最大偏差不超过3%。第二种方法涉及计算抛物线，也记录在 ε'' 的频率依赖性中。在 6–8 GHz 范围内，当 SiC 含量低于 40% 时，ε" 的偏差不超过 3%。