Abstract

The possibility of the formation of structures such as compounds of elements between chalcogenides and the transition group of metals in the crystal lattice of silicon is studied. This is an urgent problem in electronics. It is shown that, under certain technological conditions, a sufficient concentration of unit cells is formed, which leads to a change in the band structure of silicon itself; i.e., a micro- and nanoscale inclusion in silicon with a direct-gap structure is obtained. The possibilities of creating a fundamentally new class of photocells with an extended spectral sensitivity region, as well as light-emitting devices, light-emitting diodes, and lasers based on them, are shown.

中文翻译：

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锌和硒原子参与的一类基于硅的新型梯度间隙结构的开发和创造

摘要

研究了硅晶格中硫属化物与金属过渡族之间的元素化合物等结构形成的可能性。这是电子领域的一个紧迫问题。结果表明，在一定的工艺条件下，形成足够浓度的晶胞，导致硅本身的能带结构发生变化；即，获得硅中具有直接带隙结构的微米级和纳米级夹杂物。展示了创建具有扩展光谱敏感区域的全新类型光电池以及基于它们的发光器件、发光二极管和激光器的可能性。